Photonic crystal fabrication on silicon-on-insulator (SOI) using 248nm and 193nm lithography

Michael Salib; Albert Michaeli; Adi Lazar; Haviv Bechor; Michael Settle; Thomas F. Krauss

doi:10.1117/12.630918

24 October 2005 Photonic crystal fabrication on silicon-on-insulator (SOI) using 248nm and 193nm lithography

Michael Salib, Albert Michaeli, Adi Lazar, Haviv Bechor, Michael Settle, Thomas F. Krauss

Proceedings Volume 6017, Nanophotonics for Communication: Materials and Devices II; 60170B (2005) https://doi.org/10.1117/12.630918
Event: Optics East 2005, 2005, Boston, MA, United States

Abstract

We report Photonic Crystal (PhC) designs fabricated in silicon-on-insulator wafers (SOI) using 248 nm & 193 nm DUV lithography. Emphasis was on demonstrating unique PhC effects through the use of standard CMOS equpiment and process development of an optical test chip using a high-volume manufacturing facility. Most of the planar 2-D PhCs waveguides were designed using a triangular lattice of holes. An extensive range of test structures were also designed, including W1 and W3 waveguides in both triangular and square lattices. The use of optical proximity correction (OPC) and variations of pitch and hole dimensions allowed for a large design-of-experiment not practical using the more conventional e-beam direct-write approach. Smart Cut SOI wafers with a thin epitaxial Si layer on a 2μm buried SiO₂ layer were first processed and characterized using 248 nm lithography. Preliminary pitch/hole patterning requirements were 400nm/200nm. Resist was changed from high- to low-contrast resist to compensate for the high sensitivity of critical hole dimension to exposure dose. Optical characterization data of PhC test structures were used to map band structure calculations and more accurately determine the PhC effective index; results were used to model more accurate pitch/hole values. Successful processing results were also obtained using 193nm lithography to resolve PhC pitch/hole dimensions of ~280/180nm. Optical characterization data are being used to refine next-generation PhC designs.

Citation Download Citation

Michael Salib, Albert Michaeli, Adi Lazar, Haviv Bechor, Michael Settle, and Thomas F. Krauss "Photonic crystal fabrication on silicon-on-insulator (SOI) using 248nm and 193nm lithography", Proc. SPIE 6017, Nanophotonics for Communication: Materials and Devices II, 60170B (24 October 2005); https://doi.org/10.1117/12.630918

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available

Members: $17.00

Non-members: $21.00 ADD TO CART

PROCEEDINGS
8 PAGES

DOWNLOAD PAPER SAVE TO MY LIBRARY

GET CITATION

RIGHTS & PERMISSIONS

Get copyright permission Get copyright permission on Copyright Marketplace

KEYWORDS

Silicon

Lithography

Etching

Photonic crystals

Waveguides

Optical proximity correction

193nm lithography

Show All Keywords

Keywords/Phrases

Search In:

Publication Years