Simulation and design of Si double-photodetector for monolithic OEIC in standard CMOS technology

Jiantao Bian; Chao Chen; Sheng Xie

doi:10.1117/12.635721

5 December 2005 Simulation and design of Si double-photodetector for monolithic OEIC in standard CMOS technology

Jiantao Bian, Chao Chen, Sheng Xie

Proceedings Volume 6020, Optoelectronic Materials and Devices for Optical Communications; 602031 (2005) https://doi.org/10.1117/12.635721
Event: Asia-Pacific Optical Communications, 2005, Shanghai, China

Abstract

Silicon photodetector can be integrated with all kinds of Silicon circuits to get monolithic OEIC. A CMOS-process-compatible silicon double-photodetector with structures of P⁺/N-well and N-well/P-substrate, called PD1 and PD2 respectively, is designed in this paper. The theoretical absolute spectral response and response speed of this double-photodetector are calculated and analyzed. Simulation results in 0.5um standard CMOS process show that the responsivity of the double-photodetector is above 0.2A/W from 400 to 900nm wavelength range without ARC (Anti-Reflection-Coating). Both the effects of the insulated medium layers (SiO₂ and Si₃N₄) in CMOS process and reverse voltage on spectral responsivity are also discussed. When the optical window area is 16.54μmx16.54μm², the capacitance of PD1 is about 100fF at a reverse voltage of 2.5V. Yet the capacitance of PD2 is almost 1/10 of PD1. With a load-resistor of 50Ω, the response speeds of PD1, PD2 and double-photodetector are 0.628, 2.04 and 2.05ns at 650nm wavelength (corresponding bandwidth about 276MHz, 85MHz and 84.7MHz), respectively. Finally, the co-design of Monolithic OEIC is also discussed. A full CMOS monolithic OEIC for optical-disc signal pickup is designed with this double-detector.

Citation Download Citation

Jiantao Bian, Chao Chen, and Sheng Xie "Simulation and design of Si double-photodetector for monolithic OEIC in standard CMOS technology", Proc. SPIE 6020, Optoelectronic Materials and Devices for Optical Communications, 602031 (5 December 2005); https://doi.org/10.1117/12.635721

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