Paper
16 July 1986 High Quality Light Sources for Optical Communication
D. J. Bull, C. J. Hwang, R. Fu, C. S. Wang
Author Affiliations +
Abstract
The fabrication, performance and application of indexed guided proton bombarded DH lasers emitting at .8, 1.3 and 1.5 microns are described. The devices are fabricated by single step LPE and utilize double current confinement configuration in order to minimize current leakage and also achieve very good lateral and optical confinements. In the 1.3 micron devices, threshold currents as low as lOmA have been achieved and coupling efficiency as high as 43% has been obtained, enabling us to linearly drive the devices up to 5mW power output from a singlemode fiber.
© (1986) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
D. J. Bull, C. J. Hwang, R. Fu, and C. S. Wang "High Quality Light Sources for Optical Communication", Proc. SPIE 0610, Scientific and Engineering Applications of Commercial Laser Devices, (16 July 1986); https://doi.org/10.1117/12.956395
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KEYWORDS
Laser damage threshold

Liquid phase epitaxy

Semiconductor lasers

Laser applications

Semiconducting wafers

Light emitting diodes

Light sources

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