Defect inspection of EUV mask blank using confocal microscopy: simulation and experiment

Seong-Sue Kim; Jinhong Park; Roman Chalykh; Jiehun Kang; SukJoo Lee; Sang-Gyun Woo; Han-Ku Cho; Joo-Tae Moon

doi:10.1117/12.656221

23 March 2006 Defect inspection of EUV mask blank using confocal microscopy: simulation and experiment

Seong-Sue Kim, Jinhong Park, Roman Chalykh, Jiehun Kang, SukJoo Lee, Sang-Gyun Woo, Han-Ku Cho, Joo-Tae Moon

Proceedings Volume 6151, Emerging Lithographic Technologies X; 61511C (2006) https://doi.org/10.1117/12.656221
Event: SPIE 31st International Symposium on Advanced Lithography, 2006, San Jose, California, United States

Abstract

A theoretical model of confocal microscopy of phase defect in EUV mask blank is developed using Fourier optics and rigorous coupled-wave analysis(RCWA). This model is verified by comparison with experimental data and then applied to calculating confocal microscopy signal of phase defect with conformal and flat surface for wavelength of 488 nm and 266 nm, respectively. From this simulation, it is shown that phase defect with flat surface is undetectable even by 266 nm-wavelength confocal microscope, while it is printable at 13.5 nm-wavelength. Subsequent simulation of energy flow rate through Mo/Si multilayer shows that this is because incident optical wave is absorbed within 4 pairs of Mo/Si multilayer, but 40 pair of Mo/Si multilayer is semi-transparent at 13.5 nm-wavelength. Based on this result, a deposition scheme of Mo/Si multilayer is suggested.

Citation Download Citation

Seong-Sue Kim, Jinhong Park, Roman Chalykh, Jiehun Kang, SukJoo Lee, Sang-Gyun Woo, Han-Ku Cho, and Joo-Tae Moon "Defect inspection of EUV mask blank using confocal microscopy: simulation and experiment", Proc. SPIE 6151, Emerging Lithographic Technologies X, 61511C (23 March 2006); https://doi.org/10.1117/12.656221

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