Molecular glass resists for EUV lithography

Anuja De Silva; Drew Forman; Christopher K. Ober

doi:10.1117/12.656559

29 March 2006 Molecular glass resists for EUV lithography

Anuja De Silva, Drew Forman, Christopher K. Ober

Proceedings Volume 6153, Advances in Resist Technology and Processing XXIII; 615341 (2006) https://doi.org/10.1117/12.656559
Event: SPIE 31st International Symposium on Advanced Lithography, 2006, San Jose, California, United States

Abstract

The semiconductor industry requires new photoresist materials in order to operate in the sub-50 nm regime. In addition to meeting the resolution and line edge roughness requirements, these photoresists must be transparent in the extreme ultraviolet and have excellent etch resistance characteristics. This report highlights several small molecule molecular glasses, which are low molecular weight organic materials that demonstrate a glass transition temperature as well as a low tendency towards crystallization, with new architectures designed for EUV lithography. Transparency at the EUV wavelength of 13.4 nm may be enhanced by incorporation of low absorbing atoms such as C, H and Si. Rigid, asymmetric structures have been included in order to reduce crystallization and increase Tg. Studying the effects of these design characteristics across a continuum of architectures enables greater insight into the factors affecting photoresist performance.

Citation Download Citation

Anuja De Silva, Drew Forman, and Christopher K. Ober "Molecular glass resists for EUV lithography", Proc. SPIE 6153, Advances in Resist Technology and Processing XXIII, 615341 (29 March 2006); https://doi.org/10.1117/12.656559

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