Hydrogenated Amorphous Silicon And Microcrystalline Silicon For The Emitter Of Silicon Bipolar Transistors

M. Ghannam; J. Nijs; R. De Keersmaecker; R. Mertens

doi:10.1117/12.961071

12 March 1986 Hydrogenated Amorphous Silicon And Microcrystalline Silicon For The Emitter Of Silicon Bipolar Transistors

M. Ghannam, J. Nijs, R. De Keersmaecker, R. Mertens

Author Affiliations +

Proceedings Volume 0617, Amorphous Semiconductors for Microelectronics; (1986) https://doi.org/10.1117/12.961071
Event: O-E/LASE'86 Symposium, 1986, Los Angeles, CA, United States

Abstract

A silicon bipolar transistor which uses phosphorus doped hydrogenated amorphous silicon deposited by means of the glow discharge technique as a material for the emitter is presented. The advantage of using such material is that its energy band-gap is wider than that of single crystal silicon. Therefore, a barrier for hole injection into the emitter is created at the emitter-base heterojunction, resulting in a higher emitter efficiency. A maximum current gain of 14 at a base Gummel number of 1.35 x 10¹³ cm^-4s is obtained, this value represents a 5-6 fold improvement over a conventional homojunction transistor with an indentical base region.

Citation Download Citation

M. Ghannam, J. Nijs, R. De Keersmaecker, and R. Mertens "Hydrogenated Amorphous Silicon And Microcrystalline Silicon For The Emitter Of Silicon Bipolar Transistors", Proc. SPIE 0617, Amorphous Semiconductors for Microelectronics, (12 March 1986); https://doi.org/10.1117/12.961071

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