Paper
20 March 2006 Aligned nanowire structures on silicon and flexible substrates and their applications
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Abstract
This paper reports on device fabrication and applications using vertically aligned nanowires (VANW) grown on silicon and flexible polyimide substrates. For bio hazards sensing applications, a tin oxide thin film was coated on the surface of nanowires to utilize high surface area density of nanostructured platform. Device fabrication processes include current silicon technology including lithography, plasma enhanced chemical vapor deposition (PECVD), and sol-gel process. The crystalline structure and sensing characteristics of tin oxide after annealing process were investigated with X-ray diffraction (XRD) and resistance monitoring at different concentration of isopropyl alcohol at part per million (ppm) levels. In addition, gold nanowires grown on flexible polyimide substrates were demonstrated, which can be used for a wide variety of applications including biomedical, display, and communication devices based on flexibility and transparency.
© (2006) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Hargsoon Yoon, Ritesh Reddy Chintakuntla, Vijay K. Varadan, and Paul B. Ruffin "Aligned nanowire structures on silicon and flexible substrates and their applications", Proc. SPIE 6172, Smart Structures and Materials 2006: Smart Electronics, MEMS, BioMEMS, and Nanotechnology, 61720H (20 March 2006); https://doi.org/10.1117/12.668746
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Cited by 1 scholarly publication.
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KEYWORDS
Nanowires

Silicon

Thin films

Sensors

Oxides

Tin

Nanolithography

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