Paper
14 April 2006 Simulation and design of optical gain in In(Al)GaN/GaN short wavelength lasers
Bernd Witzigmann, Valerio Laino, Mathieu Luisier, Friedhard Roemer, Georg Feicht, Ulrich T. Schwarz
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Abstract
In this contribution, microscopic simulation of optical gain in GaN-based short-wavelength lasers is presented. The model is used to perform a design study of different active regions, and to discuss the impact of inhomogeneous broadening, carrier-induced screening of the piezo charges, and well thickness on material gain and laser threshold current. As a reference, the model parameters are calibrated with temperature dependent Hakki-Paoli measurements of spectral gain. Excellent agreement between measurement and simulation is achieved, which gives the design studies a quantitative character.
© (2006) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Bernd Witzigmann, Valerio Laino, Mathieu Luisier, Friedhard Roemer, Georg Feicht, and Ulrich T. Schwarz "Simulation and design of optical gain in In(Al)GaN/GaN short wavelength lasers", Proc. SPIE 6184, Semiconductor Lasers and Laser Dynamics II, 61840E (14 April 2006); https://doi.org/10.1117/12.662048
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Cited by 6 scholarly publications.
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KEYWORDS
Quantum wells

Semiconductor lasers

Optical simulations

Temperature metrology

Gallium nitride

Indium gallium nitride

Laser damage threshold

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