Paper
17 April 2006 Single-frequency high-power continuous-wave oscillation at 1003 nm of an optically pumped semiconductor laser
Author Affiliations +
Abstract
This work reports single-frequency laser oscillation at λ = 1003.4 nm of an optically pumped external cavity semiconductor laser. By using a gain structure bonded onto a high conductivity substrate, we demonstrate both theoretically and experimentally the strong reduction of the thermal resistance of the active semiconductor medium, resulting in a high power laser emission. The spectro-temporal dynamics of the laser is also explained. Furthermore, an intracavity frequency-doubling crystal was used to obtain a stable single-mode generation of blue (λ = 501.5 nm) with an output power around 60 mW.
© (2006) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
M. Jacquemet, M. Domenech, J. Dion, M. Strassner, G. Lucas-Leclin, P. Georges, I. Sagnes, and A. Garnache "Single-frequency high-power continuous-wave oscillation at 1003 nm of an optically pumped semiconductor laser", Proc. SPIE 6184, Semiconductor Lasers and Laser Dynamics II, 61841X (17 April 2006); https://doi.org/10.1117/12.662931
Lens.org Logo
CITATIONS
Cited by 4 scholarly publications and 1 patent.
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Fabry–Perot interferometers

Quantum wells

Silicon carbide

Semiconductor lasers

Mirrors

Gallium arsenide

Crystals

Back to Top