Free-standing Si/SiO<sub>2</sub> superlattices: fabrication procedure and optical, structural, and light-emitting properties

S. Novikov; J. Sinkkonen; L. Khriachtchev; M. Räsänen; A. Sitnikova

doi:10.1117/12.661849

20 April 2006 Free-standing Si/SiO₂ superlattices: fabrication procedure and optical, structural, and light-emitting properties

S. Novikov, J. Sinkkonen, L. Khriachtchev, M. Räsänen, A. Sitnikova

Author Affiliations +

Proceedings Volume 6195, Nanophotonics; 619512 (2006) https://doi.org/10.1117/12.661849
Event: SPIE Photonics Europe, 2006, Strasbourg, France

Abstract

The Si/SiO₂ superlattices were prepared by a molecular beam deposition method, high temperature furnace annealing (1100 °C), and back-side Si wafer etching in tetramethyl ammonium solution. Transmission electron microscopy and Raman spectroscopy show that the layered structure is not preserved during high temperature treatment. The etching of the substrate increases photoluminescence of the Si/SiO₂ material. Optical waveguiding was realized for the free-standing sample demonstrating its reasonable optical quality and providing the optical parameters.

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S. Novikov, J. Sinkkonen, L. Khriachtchev, M. Räsänen, and A. Sitnikova "Free-standing Si/SiO₂ superlattices: fabrication procedure and optical, structural, and light-emitting properties", Proc. SPIE 6195, Nanophotonics, 619512 (20 April 2006); https://doi.org/10.1117/12.661849

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