Near-infrared electroluminescence of furnace or CO<sub>2</sub> laser annealed Si-rich SiO<sub>2</sub> with structural defects and Si nanocrystals

Gong-Ru Lin; Chun-Jung Lin

doi:10.1117/12.663184

20 April 2006 Near-infrared electroluminescence of furnace or CO₂ laser annealed Si-rich SiO₂ with structural defects and Si nanocrystals

Gong-Ru Lin, Chun-Jung Lin

Author Affiliations +

Proceedings Volume 6195, Nanophotonics; 619515 (2006) https://doi.org/10.1117/12.663184
Event: SPIE Photonics Europe, 2006, Strasbourg, France

Abstract

Electroluminescence of the CO₂ laser annealed PECVD-grown silicon-rich silicon oxide (SRSO) based metal-oxide-semiconductor diode with embedded Si nanocrystals is demonstrated. The structural and optical properties of a CO₂ laser rapid thermal annealed Si-rich SiO_1.25 film are investigated. The color of SiO_1.25 film changes from light yellow to dark-yellow as the CO₂ laser annealing intensity enlarges from 1.5 to 13.5 kW/cm². Such a color change is mainly attributed to both the increasing absorption coefficient and refractive index of the SiO_1.25 film under the precipitation of Si nanocrystals. The thickness of the SiO_1.25 film was thinned during the dehydrogenated process at a slightly lower laser intensity of 4 kW/cm², while the complete dehydrogenation is observed after annealing for 1.4 ms associated with a thickness shrinking from 280 nm to 240 nm. TEM analysis and photoluminescence spectroscopy at 806 nm reveal that the Si nanocrystals with maximum diameter and density of 5.3 nm and 10¹⁸ cm^-3, respectively, can be precipitated as the CO₂ laser intensity increase to an ablation threshold intensity of 5.8 kW/cm². The laser ablation introduces numerous structural defects and causes the anomalous absorption as well as photoluminescence at blue-green wavelengths in the SiO_1.25 film. From the reflection spectra with enlarged interfering fringe amplitude, the increasing refractive index (from 1.57 to 1.88) of the SiO_1.25 with increasing laser intensity can be concluded. In comparison with that of the quartz or as-grown sample, the red-shifted optical bandgap energy of the CO₂ laser-annealed SiO_1.25 film from 5.4 eV to 4 eV has evidenced the effect of the strong blue-green absorption on the oxygen vacancy defect. The forward turn-on voltage and current density of the ITO/CO₂ laser annealed SRSO/p-Si/Al MOS diode are 79 V and 33 μA/cm², respectively. The maximum output power of 29 nW associated with a P-I slope of 4.4 mW/A is determined.

Citation Download Citation

Gong-Ru Lin and Chun-Jung Lin "Near-infrared electroluminescence of furnace or CO₂ laser annealed Si-rich SiO₂ with structural defects and Si nanocrystals", Proc. SPIE 6195, Nanophotonics, 619515 (20 April 2006); https://doi.org/10.1117/12.663184

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