Self-assembled Ni nanodot on SiO<sub>2</sub> film: a novel reactive ion etching mask for Si nanopillar formation on Si substrate

Huang-Shen Lin; Chih-Chiang Kao; Hao-Chung Kuo; Shing-Chung Wang; Gong-Ru Lin

doi:10.1117/12.663339

20 April 2006 Self-assembled Ni nanodot on SiO₂ film: a novel reactive ion etching mask for Si nanopillar formation on Si substrate

Huang-Shen Lin, Chih-Chiang Kao, Hao-Chung Kuo, Shing-Chung Wang, Gong-Ru Lin

Author Affiliations +

Proceedings Volume 6195, Nanophotonics; 61951W (2006) https://doi.org/10.1117/12.663339
Event: SPIE Photonics Europe, 2006, Strasbourg, France

Abstract

By rapid thermal annealing the Ni film evaporated on thin SiO₂ layer covered Si substrate, we have successfully demonstrated the self-aggregation of two-dimensional randomized Ni nano-dots on Si wafer. The thin oxide layer prevents the formation of NiSi₂ compounds and facilitates the self-assembly of Ni nanodots from retaining the thermal power on SiO₂ layer. This greatly shrinks the annealing time required for metallic nanodot formation from >10 min to <30 sec. With the advantage of the self-assemble Ni/SiO₂ nano-dots based nano-mask, a large-area Si nano-pillar array with rod size of <50 nm can be formatted on Si substrate through the induced coupled plasma reactive ion etching (ICP-RIE) procedure. After removing Ni dots and the SiO₂ film on the Si substrate, both the visible and near infrared photoluminescence from the Si nano-pillar sample were observed and analyzed.

Citation Download Citation

Huang-Shen Lin, Chih-Chiang Kao, Hao-Chung Kuo, Shing-Chung Wang, and Gong-Ru Lin "Self-assembled Ni nanodot on SiO₂ film: a novel reactive ion etching mask for Si nanopillar formation on Si substrate", Proc. SPIE 6195, Nanophotonics, 61951W (20 April 2006); https://doi.org/10.1117/12.663339

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