Characterization of chemisorption on porous silicon by sum frequency generation

K. W Kolasinski; I. Harrison; A. V. Gavrilenko; C. E. Bonner; V. I. Gavrilenko

doi:10.1117/12.681142

14 September 2006 Characterization of chemisorption on porous silicon by sum frequency generation

K. W Kolasinski, I. Harrison, A. V. Gavrilenko, C. E. Bonner, V. I. Gavrilenko

Proceedings Volume 6320, Complex Photonic Media; 63200Q (2006) https://doi.org/10.1117/12.681142
Event: SPIE Optics + Photonics, 2006, San Diego, California, United States

Abstract

Sum Frequency Generation (SFG) spectra of nanocrystalline porous silicon (por-Si) exposed to different chemical treatments are studied. We report the first SFG studies of por-Si in direct contact with a liquid. SFG is excited by a regeneratively amplified Ti:sapphire system (787 nm, 120 fs, 1 kHz). The sum frequency is generated by combining this light with infrared that is generated with an optical parametric amplifier (OPA) that delivers 100-200 μJ pulses at 1370-1770 nm. Por-Si is made from a 10-20 Ω cm p-type Si(001) wafer. Comparisons are made to planar Si(001) as well as GaAs(001). First principle electronic structure theory based on density functional theory (DFT) is used to study the adsorption and optical response functions from the system of ethanol molecule adsorbed on Si(001) and Si(111) surfaces. Equilibrium atomic geometries are obtained through molecular dynamics and total energy minimization methods. Electron energy structure and optical properties are calculated using generalized gradient approximation method with ab initio pseudopotentials. Predicted differential optical absorption spectra for chemisorbed Si(001) and Si(111) surfaces are analyzed in comparison with SFG data measured on differently treated porous silicon. Substantial modifications of the surface atomic and electron energy structures of silicon surfaces due to chemisorption are shown to provide the dominant contributions to the SFG response.

Citation Download Citation

K. W Kolasinski, I. Harrison, A. V. Gavrilenko, C. E. Bonner, and V. I. Gavrilenko "Characterization of chemisorption on porous silicon by sum frequency generation", Proc. SPIE 6320, Complex Photonic Media, 63200Q (14 September 2006); https://doi.org/10.1117/12.681142

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