High performance organic field-effect transistors

Wei-Yang Chou; Yu-Shen Mai; Chia-Wei Kuo; Horng-Long Cheng; Yi-Ren Chen; Shih-Ting Lin; Feng-Yu Yang; Dun-Yin Shu; Chi-Chang Liao

doi:10.1117/12.679025

25 August 2006 High performance organic field-effect transistors

Wei-Yang Chou, Yu-Shen Mai, Chia-Wei Kuo, Horng-Long Cheng, Yi-Ren Chen, Shih-Ting Lin, Feng-Yu Yang, Dun-Yin Shu, Chi-Chang Liao

Author Affiliations +

Proceedings Volume 6336, Organic Field-Effect Transistors V; 63360K (2006) https://doi.org/10.1117/12.679025
Event: SPIE Optics + Photonics, 2006, San Diego, California, United States

Abstract

The following report presents innovative technique for surface modification and device construction of top-contact pentacene-based thin film transistors (TFTs) with saturation mobility about 2.0 cm²/Vs. In the experiment we have utilized PSPI as a modification layer presenting a non-polar interface on which the semiconductor, pentacene, could grow. The surface of the modification layers was exposed to a polarized ultraviolet light with dose ranging from 0.2 J to 8 J. Ultraviolet light was applied to achieve a non-polar surface on which high performance TFTs have been subsequently fabricated. The experimental results showed that the parasitic contact resistances of silver electrodes could be extracted by gated-transfer length method, and the corrected field-effect mobility of pentacene TFTs for linear region was as high as 2.25 cm²/Vs. In this study, we were able to control the surface energy of polymer-based gate dielectric layers and the surface energy of the PSPI layer increasing the energy from about 38 to 42 mJ/m² by differentiating doses of polarized ultraviolet light. When the PSPI film was exposed to 1 J of polarized ultraviolet light, the surface energy of PSPI, measured by the contact angle method, was about 38 mJ/m². The measured energy matched the theoretically calculated surface energy of a pentacene crystal. Hence, the higher mobility OTFTs with low surface energy gate dielectric were obtained by spin-coating the PSPI as a modifier.

Citation Download Citation

Wei-Yang Chou, Yu-Shen Mai, Chia-Wei Kuo, Horng-Long Cheng, Yi-Ren Chen, Shih-Ting Lin, Feng-Yu Yang, Dun-Yin Shu, and Chi-Chang Liao "High performance organic field-effect transistors", Proc. SPIE 6336, Organic Field-Effect Transistors V, 63360K (25 August 2006); https://doi.org/10.1117/12.679025

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