Analytical and T-CAD modeling of pentacene thin-film transistors

Yet-Min Chen; Yu-Sheng Chen; Jian-Jang Huang; Jiun-Haw Lee; Yu-Wu Wang; Yi-Kai Wang

doi:10.1117/12.679748

25 August 2006 Analytical and T-CAD modeling of pentacene thin-film transistors

Yet-Min Chen, Yu-Sheng Chen, Jian-Jang Huang, Jiun-Haw Lee, Yu-Wu Wang, Yi-Kai Wang

Author Affiliations +

Proceedings Volume 6336, Organic Field-Effect Transistors V; 63361H (2006) https://doi.org/10.1117/12.679748
Event: SPIE Optics + Photonics, 2006, San Diego, California, United States

Abstract

Many researches report that the mobility in organic material is dependent on not only the gate field but also the grain size. There is also some evidence to prove that the gate length is strongly related to the carrier mobility. We construct both the analytical model of organic thin film transistor and the large signal circuit model designed by T-CAD to fit the measured I _DS - V _DS curves. We first apply basic I _DS - V _DS equations in both triode and saturation regions with mobility μ best fitted to measured I-V curves. The "best-fitted" μ increases with the gate length, and is related to the increase of total channel resistance due to the presence of small grains size of pentacene next to source/drain electrodes. We then use the Advanced Design System software to design the large signal circuit model. Similar to the MOSFET, we add the additional parameters to fit the I _DS - V _DS curves, ex: Rgd, Rgs, and Rp. Here, Rgd. With the circuit simulation, we find that Rgd presents the leakage current from gate to source, and it affects the slope of curves in the saturation region in the I _DS - V _DS curves. The equivalent circuit can fit the I _DS - V _DS curves very well with the proper parameter set.

Citation Download Citation

Yet-Min Chen, Yu-Sheng Chen, Jian-Jang Huang, Jiun-Haw Lee, Yu-Wu Wang, and Yi-Kai Wang "Analytical and T-CAD modeling of pentacene thin-film transistors", Proc. SPIE 6336, Organic Field-Effect Transistors V, 63361H (25 August 2006); https://doi.org/10.1117/12.679748

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