Evaluation of bi-layer TaSix absorber on buffer for EUV mask

Koichiro Kanayama; Shinpei Tamura; Yasushi Nishiyama; Masashi Kawashita; Tadashi Matsuo; Akira Tamura; Susumu Nagashige; Kenji Hiruma; Doohoon Goo; Iwao Nishiyama

doi:10.1117/12.686388

20 October 2006 Evaluation of bi-layer TaSix absorber on buffer for EUV mask

Koichiro Kanayama, Shinpei Tamura, Yasushi Nishiyama, Masashi Kawashita, Tadashi Matsuo, Akira Tamura, Susumu Nagashige, Kenji Hiruma, Doohoon Goo, Iwao Nishiyama

Author Affiliations +

Proceedings Volume 6349, Photomask Technology 2006; 63493A (2006) https://doi.org/10.1117/12.686388
Event: SPIE Photomask Technology, 2006, Monterey, California, United States

Abstract

We evaluated TaSix-based bi-layer absorber on ZrSi-based buffer for EUV mask, especially considering the possibility of ZrSi-based film as a combined buffer and capping layer. Since ZrSi-based film has both high dry-etching resistance and EUV transparency, it has potentiality to work as a combined capping and buffer layer. AFM machining repair of bi-layer TaSix absorber on ZrSi-based buffer can be performed to good profile. Printing evaluation showed that over-repair into buffer layer did not affect significantly to wafer CD. FIB (10keV) repair of bi-layer TaSix absorber on ZrSi-based buffer needs improvement for side-wall profile and distinguishable evaluation from implanted Ga⁺ effect in more detail. Effect of FIB (10keV) scan with ordinary repair process seems to be at least smaller than 10%.

Citation Download Citation

Koichiro Kanayama, Shinpei Tamura, Yasushi Nishiyama, Masashi Kawashita, Tadashi Matsuo, Akira Tamura, Susumu Nagashige, Kenji Hiruma, Doohoon Goo, and Iwao Nishiyama "Evaluation of bi-layer TaSix absorber on buffer for EUV mask", Proc. SPIE 6349, Photomask Technology 2006, 63493A (20 October 2006); https://doi.org/10.1117/12.686388

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