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19 October 2006 Analysis and design of key phenomena in electronics: nanostructures and devices
Neil Goldsman, Akin Akturk
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Proceedings Volume 6370, Nanomaterial Synthesis and Integration for Sensors, Electronics, Photonics, and Electro-Optics; 63700I (2006) https://doi.org/10.1117/12.692871
Event: Optics East 2006, 2006, Boston, Massachusetts, United States
Abstract
We have developed techniques to model electron dynamics in carbon nanotubes and hypothetical field effect devices that incorporate nanotubes into their structure. We use both Monte Carlo methods that are based on semiclassical transport, and distributed analyses that utilize quantum corrected semiconductor equations. The MC calculations predict velocity oscillations that are spatially distributed along the carbon nanotube. A quantum corrected semiconductor mathematical model is presented for CNT-MOSFET device simulation. Calculations predict improved performance of CNT-MOSFETs over conventional structures under certain conditions.
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Neil Goldsman and Akin Akturk "Analysis and design of key phenomena in electronics: nanostructures and devices", Proc. SPIE 6370, Nanomaterial Synthesis and Integration for Sensors, Electronics, Photonics, and Electro-Optics, 63700I (19 October 2006); https://doi.org/10.1117/12.692871
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KEYWORDS
Monte Carlo methods
Field effect transistors
Silicon
Phonons
Semiconductors
Graphene
Carbon nanotubes
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