Paper
2 October 2006 Sb-based quantum dots for creating novel light-emitting devices for optical communications
Naokatsu Yamamoto, Kouichi Akahane, Shin-ichirou Gozu, Akio Ueta, Naoki Ohtani, Masahiro Tsuchiya
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Abstract
We present a fabrication technique for creating high-quality structures of antimonide-based quantum dots (Sb-based QDs), which show long-wavelength emissions for fiber-optic communications. By using the Sb-based QDs as the active medium, we successfully demonstrated optical-emissions in the 1.3- and 1.5-μm wavebands from a long-wavelength vertical-cavity surface emitting laser (VCSEL) structure fabricated on a GaAs substrate. Additionally, we describe a growth technique for Sb-based QDs on a silicon wafer, which may become novel-materials for silicon photonics technology.
© (2006) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Naokatsu Yamamoto, Kouichi Akahane, Shin-ichirou Gozu, Akio Ueta, Naoki Ohtani, and Masahiro Tsuchiya "Sb-based quantum dots for creating novel light-emitting devices for optical communications", Proc. SPIE 6393, Nanophotonics for Communication: Materials, Devices, and Systems III, 63930A (2 October 2006); https://doi.org/10.1117/12.685665
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CITATIONS
Cited by 4 scholarly publications and 1 patent.
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KEYWORDS
Gallium arsenide

Silicon

Vertical cavity surface emitting lasers

Chemical species

Antimony

Mirrors

Semiconducting wafers

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