Paper
5 October 2006 Optimisation of quantum dot infrared photodetectors (QDIPs) for imaging applications
P. Aivaliotis, E. Zibik, L. R. Wilson, J. P. R. David, M. Hopkinson, C. Groves
Author Affiliations +
Proceedings Volume 6395, Electro-Optical and Infrared Systems: Technology and Applications III; 63950B (2006) https://doi.org/10.1117/12.690049
Event: Optics/Photonics in Security and Defence, 2006, Stockholm, Sweden
Abstract
Here we present an engineering study showing how altering various aspects of the growth parameters of an InAs dot within an InGaAs well (DWELL) QDIP affects its performance. Amongst our findings, we show capability to control the absorption wavelength both during and after growth by altering the size of the dots and via the quantum confined Stark effect respectively. The addition of AlGaAs current blocking layers is shown to reduce deleterious dark current by over two orders of magnitude.
© (2006) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
P. Aivaliotis, E. Zibik, L. R. Wilson, J. P. R. David, M. Hopkinson, and C. Groves "Optimisation of quantum dot infrared photodetectors (QDIPs) for imaging applications", Proc. SPIE 6395, Electro-Optical and Infrared Systems: Technology and Applications III, 63950B (5 October 2006); https://doi.org/10.1117/12.690049
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KEYWORDS
Gallium arsenide

Indium arsenide

Quantum wells

Quantum well infrared photodetectors

Quantum dots

Gallium

Infrared imaging

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