Growth and characterization of GaAs/InGaP heterostructure for semiconductor laser cooling

R. B. Laghumavarapu; N. Nuntawong; A. R. Albrecht; D. L. Huffaker

doi:10.1117/12.708337

7 March 2007 Growth and characterization of GaAs/InGaP heterostructure for semiconductor laser cooling

R. B. Laghumavarapu, N. Nuntawong, A. R. Albrecht, D. L. Huffaker

Proceedings Volume 6461, Laser Cooling of Solids; 64610M (2007) https://doi.org/10.1117/12.708337
Event: Lasers and Applications in Science and Engineering, 2007, San Jose, California, United States

Abstract

We present the growth and characterization of high quality semiconductor laser cooling material. The structure consists of GaAs passivated by InGaP which has been reported to have a longest surface recombination lifetime. GaAs was grown on 10 degree miscut GaAs substrate and sandwiched between lattice matched In_0.49Ga_0.51P. This structure was grown by a low-pressure metal organic chemical vapor deposition (MOCVD) system. The material was grown in the temperature range of 550 to 700 °C at 60.8 Torr. The morphology of InGaP was improved by the growth on 10 degree miscut substrate along <110> direction, which is confirmed by X-ray diffraction (XRD). The uninterrupted growth technique and GaP separation layer are employed to prevent the indium segregation and P/As intermixing at the interface between InGaP and GaAs. The effects of V/III ratio, growth temperature and material precursors on material impurities were also studied. The carrier lifetimes were measured using the time resolved photoluminescence (TRPL) technique at cryogenic temperatures. The experimental results show that the carrier lifetime was increased by 5 times with the use of TBA as arsenic source in place of AsH₃. Recent results show a highest room temperature carrier lifetime of 2 &mgr;sec.

Citation Download Citation

R. B. Laghumavarapu, N. Nuntawong, A. R. Albrecht, and D. L. Huffaker "Growth and characterization of GaAs/InGaP heterostructure for semiconductor laser cooling", Proc. SPIE 6461, Laser Cooling of Solids, 64610M (7 March 2007); https://doi.org/10.1117/12.708337

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