Paper
8 February 2007 Studies of longitudinal optical phonons in GaN by subpicosecond time-resolved Raman spectroscopy
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Abstract
The lifetime of longitudinal optical phonon mode in GaN has been measured by subpicosecond time-resolved Raman spectroscopy for photoexcited electron-hole pair density ranging from 1016 cm-3 to 2x1019cm-3 and at T = 300K. The lifetime has been found to decrease from 2.5 ps, at the lowest density to 0.35 ps, at the highest density. Possible mechanism for this observation has been discussed. Our experimental findings help resolve the recent controversy over the lifetime of LO phonon mode in GaN.
© (2007) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
K. T. Tsen, Juliann G. Kiang, D. K. Ferry, and H. Morkoç "Studies of longitudinal optical phonons in GaN by subpicosecond time-resolved Raman spectroscopy", Proc. SPIE 6471, Ultrafast Phenomena in Semiconductors and Nanostructure Materials XI and Semiconductor Photodetectors IV, 64710X (8 February 2007); https://doi.org/10.1117/12.703696
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KEYWORDS
Phonons

Gallium nitride

Raman spectroscopy

Picosecond phenomena

Raman scattering

Electroluminescence

Semiconductors

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