Paper
20 February 2007 Studies of interfacial optical and electrical properties on dielectric/ZnO systems
R. S. Wang, H. C. Ong
Author Affiliations +
Abstract
The thermal stability of AlOx and MgOx on ZnO films has been studied by using photoluminescence, cathodoluminescence and current-voltage measurements. It is found that the interfaces degrade significantly upon thermal annealing, which are evident by the reduction of the band-edge emission as well as the increase of conductance with annealing temperature and duration. By using secondary ion mass spectroscopy and diffusion model, the dependence of luminescence on thermal treatment can be well simulated and the degradation of oxide/ZnO can be attributed to the out-diffusion of Zn into the oxide layer from ZnO. Our studies point out the importance of developing appropriate diffusion barrier for the fabrication of low temperature processed ZnO transistors.
© (2007) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
R. S. Wang and H. C. Ong "Studies of interfacial optical and electrical properties on dielectric/ZnO systems", Proc. SPIE 6474, Zinc Oxide Materials and Devices II, 647410 (20 February 2007); https://doi.org/10.1117/12.714023
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KEYWORDS
Zinc oxide

Annealing

Zinc

Interfaces

Diffusion

Oxides

Aluminum

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