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The thermal stability of AlOx and MgOx on ZnO films has been studied by using
photoluminescence, cathodoluminescence and current-voltage measurements. It is
found that the interfaces degrade significantly upon thermal annealing, which are
evident by the reduction of the band-edge emission as well as the increase of
conductance with annealing temperature and duration. By using secondary ion mass
spectroscopy and diffusion model, the dependence of luminescence on thermal
treatment can be well simulated and the degradation of oxide/ZnO can be attributed to
the out-diffusion of Zn into the oxide layer from ZnO. Our studies point out the
importance of developing appropriate diffusion barrier for the fabrication of low
temperature processed ZnO transistors.
R. S. Wang andH. C. Ong
"Studies of interfacial optical and electrical properties on dielectric/ZnO systems", Proc. SPIE 6474, Zinc Oxide Materials and Devices II, 647410 (20 February 2007); https://doi.org/10.1117/12.714023
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R. S. Wang, H. C. Ong, "Studies of interfacial optical and electrical properties on dielectric/ZnO systems," Proc. SPIE 6474, Zinc Oxide Materials and Devices II, 647410 (20 February 2007); https://doi.org/10.1117/12.714023