Paper
15 March 2007 Detection signal analysis of actinic inspection of EUV mask blanks using dark-field imaging
Toshihiko Tanaka, Tsuneo Terasawa, Nobuyuki Iriki, Hajime Aoyama, Toshihisa Tomie
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Abstract
The development of defect-free mask blanks including inspection is one of challenges for the implementation of extreme ultraviolet lithography (EUVL). Among others, inspection of multilayer coated mask blanks with no oversight of critical defects is a challenging issue for providing mask blanks with free defects. In this paper, the printability of a small defect located underneath the reflective multilayer is studied, and the possibility of inspection of the defect is investigated using MIRAI proof-of concept (POC) actinic inspection tool with a 26x Schwarzschild optics of numerical aperture (NA) of 0.2. A critical defect giving a troublesome CD change can be detected. And the through focus characteristics in various shape defects are also analyzed.
© (2007) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Toshihiko Tanaka, Tsuneo Terasawa, Nobuyuki Iriki, Hajime Aoyama, and Toshihisa Tomie "Detection signal analysis of actinic inspection of EUV mask blanks using dark-field imaging", Proc. SPIE 6517, Emerging Lithographic Technologies XI, 65171Y (15 March 2007); https://doi.org/10.1117/12.711263
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CITATIONS
Cited by 6 scholarly publications and 1 patent.
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KEYWORDS
Inspection

Signal detection

Photomasks

Extreme ultraviolet

Reflectivity

Critical dimension metrology

Defect inspection

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