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22 March 2007 Material design of negative-tone polyphenol resist for EUV and EB lithography
Kyoko Kojima, Shigeki Mori, Daiju Shiono, Hideo Hada, Junichi Onodera
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Proceedings Volume 6519, Advances in Resist Materials and Processing Technology XXIV; 65191D (2007) https://doi.org/10.1117/12.711759
Event: SPIE Advanced Lithography, 2007, San Jose, California, United States
Abstract
In order to enable design of a negative-tone polyphenol resist using polarity-change reaction, five resist compounds (3M6C-MBSA-BLs) with different number of functional group of &ggr;-hydroxycarboxyl acid were prepared and evaluated by EB lithography. The resist using mono-protected compound (3M6C-MBSA-BL1a) showed 40-nm hp resolution at an improved dose of 52 &mgr;C/cm2 probably due to removal of a non-protected polyphenol while the sensitivity of the resist using a compound of protected ratio of 1.1 on average with distribution of different protected ratio was 72 &mgr;C/cm2. For evaluation of the di-protected compound based resist, a di-protected polyphenol was synthesized by a newly developed synthetic route of 3-steps reaction, which is well-suited for mass production. The resist using di-protected compound (3M6C-MBSA-BL2b) also showed 40-nm hp resolution at a dose of 40 &mgr;C/cm2, which was faster than that of mono-protected resist. Fundamental EUV lithographic evaluation of the resist using 3M6C-MBSA-BL2b by an EUV open frame exposure tool (EUVES-7000) gave its estimated optimum sensitivity of 7 mJ/cm2 and a proof of fine development behavior without any swelling.
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Kyoko Kojima, Shigeki Mori, Daiju Shiono, Hideo Hada, and Junichi Onodera "Material design of negative-tone polyphenol resist for EUV and EB lithography", Proc. SPIE 6519, Advances in Resist Materials and Processing Technology XXIV, 65191D (22 March 2007); https://doi.org/10.1117/12.711759
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KEYWORDS
Lithography
Extreme ultraviolet lithography
Line edge roughness
Extreme ultraviolet
Semiconductors
Chromatography
Inspection
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