Optical Study Of The Growth Of Ta2O5 and SiO2 Layers Obtained By Ion Assisted Deposition

F Flory; G Albrand; C Montelymard; E Pelletier

doi:10.1117/12.938387

13 October 1986 Optical Study Of The Growth Of Ta₂O₅ and SiO₂ Layers Obtained By Ion Assisted Deposition

F Flory, G Albrand, C Montelymard, E Pelletier

Proceedings Volume 0652, Thin Film Technologies II; (1986) https://doi.org/10.1117/12.938387
Event: 1986 International Symposium/Innsbruck, 1986, Innsbruck, Austria

Abstract

Argon ion bombardment conditions to obtain Ta₂0₅ and Si0₂ layers with a minimal optical absorption and a packing density close to one are defined. Applied to multilayers, these techniques give filters with an excellent stability of their optical properties when exposed to a moist atmosphere.

Citation Download Citation

F Flory, G Albrand, C Montelymard, and E Pelletier "Optical Study Of The Growth Of Ta₂O₅ and SiO₂ Layers Obtained By Ion Assisted Deposition", Proc. SPIE 0652, Thin Film Technologies II, (13 October 1986); https://doi.org/10.1117/12.938387

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