MBE grown type-II superlattice photodiodes for MWIR and LWIR imaging applications

Cory J. Hill; Jian V. Li; Jason M. Mumolo; Sarath D. Gunapala; David R. Rhiger; Robert E. Kvaas; Sean F. Harris

doi:10.1117/12.721330

14 May 2007 MBE grown type-II superlattice photodiodes for MWIR and LWIR imaging applications

Cory J. Hill, Jian V. Li, Jason M. Mumolo, Sarath D. Gunapala, David R. Rhiger, Robert E. Kvaas, Sean F. Harris

Proceedings Volume 6542, Infrared Technology and Applications XXXIII; 654205 (2007) https://doi.org/10.1117/12.721330
Event: Defense and Security Symposium, 2007, Orlando, Florida, United States

Abstract

We report on the status of GaSb/InAs type-II superlattice diodes grown by molecular beam epitaxy (MBE) and designed for infrared absorption in the 2-5μm and 8-12&mgr;m bands. Recent LWIR devices have produced detectivities as high as 8x10¹⁰ Jones with a differential resistance-area product greater than 6 Ohmcm² at 80K with a long wavelength cutoff of approximately 12&mgr;m. The measured quantum efficiency of these front-side illuminated devices is close to 30% in the 10-11μm range. MWIR devices have produced detectivities as high as 8x10¹³ Jones with a differential resistance-area product greater than 3x10⁷ Ohmcm² at 80K with a long wavelength cutoff of approximately 3.7μm. The measured quantum efficiency of these front-side illuminated MWIR devices is close to 40% in the 2-3μm range at low temperature and increases to over 60% near room temperature. Initial results on SiO₂ and epitaxial-regrowth based passivation techniques are also presented.

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Cory J. Hill, Jian V. Li, Jason M. Mumolo, Sarath D. Gunapala, David R. Rhiger, Robert E. Kvaas, and Sean F. Harris "MBE grown type-II superlattice photodiodes for MWIR and LWIR imaging applications", Proc. SPIE 6542, Infrared Technology and Applications XXXIII, 654205 (14 May 2007); https://doi.org/10.1117/12.721330

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