InGaAsP avalanche photodetectors for non-gated 1.06 um photon-counting receivers

Mark A. Itzler; Xudong Jiang; Rafael Ben-Michael; Krystyna Slomkowski; Michael A. Krainak; Stewart Wu; Xiaoli Sun

doi:10.1117/12.719471

7 May 2007 InGaAsP avalanche photodetectors for non-gated 1.06 micron photon-counting receivers

Mark A. Itzler, Xudong Jiang, Rafael Ben-Michael, Krystyna Slomkowski, Michael A. Krainak, Stewart Wu, Xiaoli Sun

Proceedings Volume 6572, Enabling Photonics Technologies for Defense, Security, and Aerospace Applications III; 65720G (2007) https://doi.org/10.1117/12.719471
Event: Defense and Security Symposium, 2007, Orlando, Florida, United States

Abstract

For the detection of single photons at 1.06 μm, silicon-based single photon avalanche diodes (SPADs) used at shorter wavelengths have very low single photon detection efficiency (~1 - 2%), while InP/InGaAs SPADs designed for telecommunications wavelengths near 1.5 μm exhibit dark count rates that generally inhibit non-gated (free-running) operation. To bridge this "single photon detection gap" for wavelengths just beyond 1 μm, we have developed high performance, large area (80 - 200 μm diameter) InP-based InGaAsP quaternary absorber SPADs optimized for operation at 1.06 μm. We demonstrate dark count rates that are sufficiently low to allow for non-gated operation while achieving detection efficiencies far surpassing those found for Si SPADs. At a detection efficiency of 10%, 80 μm diameter devices exhibit dark count rates below 1000 Hz and photon counting rates exceeding 1 MHz when operated at -40 °C.

Citation Download Citation

Mark A. Itzler, Xudong Jiang, Rafael Ben-Michael, Krystyna Slomkowski, Michael A. Krainak, Stewart Wu, and Xiaoli Sun "InGaAsP avalanche photodetectors for non-gated 1.06 micron photon-counting receivers", Proc. SPIE 6572, Enabling Photonics Technologies for Defense, Security, and Aerospace Applications III, 65720G (7 May 2007); https://doi.org/10.1117/12.719471

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