Characteristics of ZnMgO-based metal-semiconductor-metal photodetectors

Kewei Liu; Dezhen Shen; Jiying Zhang; Youming Lu; Dayong Jiang; Yanmin Zhao; Binghui Li; Dongxu Zhao; Zhenzhong Zhang; Bin Yao

doi:10.1117/12.790770

3 March 2008 Characteristics of ZnMgO-based metal-semiconductor-metal photodetectors

Kewei Liu, Dezhen Shen, Jiying Zhang, Youming Lu, Dayong Jiang, Yanmin Zhao, Binghui Li, Dongxu Zhao, Zhenzhong Zhang, Bin Yao

Author Affiliations +

Proceedings Volume 6621, International Symposium on Photoelectronic Detection and Imaging 2007: Photoelectronic Imaging and Detection; 662116 (2008) https://doi.org/10.1117/12.790770
Event: International Symposium on Photoelectronic Detection and Imaging: Technology and Applications 2007, 2007, Beijing, China

Abstract

In recent years, ZnMgO semiconductor alloys, with a direct bandgap tunable between 3.37 eV and 7.8 eV, become one of the most suitable materials for the fabrication of ultraviolet detectors. In this paper, we have fabricated metal-semiconductor-metal photodetectors on 1-μm thick Zn_0.8Mg_0.2O films. The interdigital metal electrodes are 500 μm long and 5 μm wide with an interelectrode spacing 2 μm, 5 μm and 10 μm, respectively. Zn_0.8Mg_0.2O films were grown on quartz by ratio frequency magnetron sputtering at 500°C. Dark current, spectral responsivity and pulse response were carried out for the devices with different finger pitches. All the photodetectors showed the peak responsivity at 330 nm and the ultraviolet-visible rejection ratio (R330 nm/R400 nm) is more than four orders of magnitude at 3 V bias. For the device with 2 μm finger pitch, the detectivity was calculated as 4.2×10¹¹ cm Hz^1/2/W at 330 nm. Furthermore, the transient response measurement for all devices revealed similar rise time of 10 ns. The 90%-10% fall times are 130 ns, 170 ns and 230 ns for the devices with different finger pitches of 2 μm, 5 μm and 10 μm, respectively.

Citation Download Citation

Kewei Liu, Dezhen Shen, Jiying Zhang, Youming Lu, Dayong Jiang, Yanmin Zhao, Binghui Li, Dongxu Zhao, Zhenzhong Zhang, and Bin Yao "Characteristics of ZnMgO-based metal-semiconductor-metal photodetectors", Proc. SPIE 6621, International Symposium on Photoelectronic Detection and Imaging 2007: Photoelectronic Imaging and Detection, 662116 (3 March 2008); https://doi.org/10.1117/12.790770

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