Preparation and investigation of electrodeposited p-Si/Cd0.3Zn0.7S0.4Se0.6 heterojunction

A. Sh. Abdinov; H. M. Mamedov; S. I. Amirova

doi:10.1117/12.742615

26 April 2007 Preparation and investigation of electrodeposited p-Si/Cd_0.3Zn_0.7S_0.4Se_0.6 heterojunction

A. Sh. Abdinov, H. M. Mamedov, S. I. Amirova

Proceedings Volume 6636, 19th International Conference on Photoelectronics and Night Vision Devices; 663613 (2007) https://doi.org/10.1117/12.742615
Event: 19th International Conference on Photoelectronics and Night Vision Devices, 2006, Moscow, Russian Federation

Abstract

The dependences of electric and photoelectric parameters of the heterojunctions p-Si/Cd_0.3Zn_0.7S_0.4Se_0.6 on the thermal annealing regime are investigated. It is shown, that after thermal annealing at 400°C for τ = 6 min, a recombination rate on the interface does not almost change in a wide range of temperature. As the annealing temperature was increased from 0 to 170°C (τ= 2min), the intensity of peak in the λml = 0.593 μm wavelength region sharply increases. Upon heart treatment in air at t = 400°C for 5 ÷ 6 min, heterojunctions exhibit high photosensitivity over a wide spectral range (0.560 - 1 .38 μm). The evaluation of solar cell parameters was carried out using the dark and light current-voltage characteristics. The open circuit photovoltage and short circuit photocurrent density of HJ were V_oc = 0.564 V, J_sc= 1 8.7 mA/cm², respectively.

Citation Download Citation

A. Sh. Abdinov, H. M. Mamedov, and S. I. Amirova "Preparation and investigation of electrodeposited p-Si/Cd_0.3Zn_0.7S_0.4Se_0.6 heterojunction", Proc. SPIE 6636, 19th International Conference on Photoelectronics and Night Vision Devices, 663613 (26 April 2007); https://doi.org/10.1117/12.742615

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