Microstructural mobility of the polymeric gate insulator affecting pentacene charge transport

Antonio Facchetti; Choongik Kim; Tobin J. Marks

doi:10.1117/12.732885

13 September 2007 Microstructural mobility of the polymeric gate insulator affecting pentacene charge transport

Antonio Facchetti, Choongik Kim, Tobin J. Marks

Proceedings Volume 6658, Organic Field-Effect Transistors VI; 66580P (2007) https://doi.org/10.1117/12.732885
Event: Photonic Devices + Applications, 2007, San Diego, California, United States

Abstract

Organic semiconductor-dielectric interfacial characteristics play a critical role in influencing organic thin-film transistor (OTFT) performance characteristics. In this study, we report new insights into how the bulk/surface physicochemical characteristics of the gate insulator modulate the thin-film growth mode, microstructure, and OTFT performance parameters of pentacene films deposited on bilayer polymer (top)-SiO₂ (bottom) gate insulators. The results demonstrate that the pentacene growth mode varies substantially with the dielectric/substrate, and correlations are established between pentacene film growth mode, the thin-film to bulk microstructural phase transition, and OTFT device performance. Furthermore, we demonstrate here for the first time the key influence of the polymeric insulator layer microstructural mobility on pentacene film growth mode and OTFT response.

Citation Download Citation

Antonio Facchetti, Choongik Kim, and Tobin J. Marks "Microstructural mobility of the polymeric gate insulator affecting pentacene charge transport", Proc. SPIE 6658, Organic Field-Effect Transistors VI, 66580P (13 September 2007); https://doi.org/10.1117/12.732885

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