Paper
14 November 2007 Effect of technical parameter on optical constants of amorphous silicon thin film
Shi-Bin Li, Zhi-Ming Wu, Kui-Peng Zhu, Ya-Dong Jiang, Wei Li, Nai-Man Niao
Author Affiliations +
Proceedings Volume 6722, 3rd International Symposium on Advanced Optical Manufacturing and Testing Technologies: Advanced Optical Manufacturing Technologies; 67221U (2007) https://doi.org/10.1117/12.783030
Event: 3rd International Symposium on Advanced Optical Manufacturing and Testing Technologies: Large Mirrors and Telescopes, 2007, Chengdu, China
Abstract
In this paper, a series of a-Si:H thin films for about 350 nanometers in thickness were deposited on K9 glass substrate by means of plasma enhanced chemical vapor deposition (PECVD) . During deposition process, there are many factors which influence the optical properties of films. The importance among them includes RF power, substrate temperature and working gas pressure. Technical parameters affect the contents of hydrogen in a-Si:H film. Hydrogen plays a critical role in enhancing the ordering of the film network in a-Si, which can increase nucleation sites and reduce crystallization temperature effectively. The optical constants (n, k) of films were obtained with Forouhi Bloomer (FB) model in spectra ellipsometer (SE) and the absorption coefficient α was deduced from α=4πk/λ.
© (2007) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Shi-Bin Li, Zhi-Ming Wu, Kui-Peng Zhu, Ya-Dong Jiang, Wei Li, and Nai-Man Niao "Effect of technical parameter on optical constants of amorphous silicon thin film", Proc. SPIE 6722, 3rd International Symposium on Advanced Optical Manufacturing and Testing Technologies: Advanced Optical Manufacturing Technologies, 67221U (14 November 2007); https://doi.org/10.1117/12.783030
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KEYWORDS
Absorption

Refractive index

Thin films

Amorphous silicon

Hydrogen

Plasma enhanced chemical vapor deposition

Optical properties

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