Validating optical proximity correction with models, masks, and wafers

Sajan Marokkey; Edward W. Conrad; Emily E. Gallagher; Hidehiro Ikeda; James A. Bruce; Mark Lawliss

doi:10.1117/12.746685

16 November 2007 Validating optical proximity correction with models, masks, and wafers

Sajan Marokkey, Edward W. Conrad, Emily E. Gallagher, Hidehiro Ikeda, James A. Bruce, Mark Lawliss

Proceedings Volume 6730, Photomask Technology 2007; 67302Q (2007) https://doi.org/10.1117/12.746685
Event: SPIE Photomask Technology, 2007, Monterey, California, United States

Abstract

Complex Optical Proximity Correction (OPC) must be deployed to meet advanced lithography requirements. The OPC models are used to convert input design shapes into mask data that often deviate significantly from both the initial design and the final wafer image in resist. The process includes selective shape biasing, applying pattern-specific corrections, and, possibly, modeling the effect at multiple exposure conditions. It is important to verify the results of the OPC model and this is done by invoking OPC verification programs. The verification models identify points of failure to specific criteria. Failure can be defined as the simulated resist dimension below which a feature will not survive additional processing. Since these models are built for use in OPC verification, they may only be well-calibrated at feature sizes near target. This can introduce uncertainties in the failure predictions. This paper will explore options for validating the OPC verification models and methods. While wafer prints are an obvious source of feedback on the simulated results, there are also options at mask level. In this paper, we study the effect of programmed defects at wafer level, mask level and through OPC verification method. For each test case, five points in the process window space are chosen to provide comparison data between OPC verification measurements, mask-level intensity contour measurements - e.g. Aerial Image Microscope System (AIMS), and wafer measurement of patterned photoresist. The results permit correlation to measurable metrics and provide an improved understanding of OPC verification validity.

Citation Download Citation

Sajan Marokkey, Edward W. Conrad, Emily E. Gallagher, Hidehiro Ikeda, James A. Bruce, and Mark Lawliss "Validating optical proximity correction with models, masks, and wafers", Proc. SPIE 6730, Photomask Technology 2007, 67302Q (16 November 2007); https://doi.org/10.1117/12.746685

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available

Members: $17.00

Non-members: $21.00 ADD TO CART

PROCEEDINGS
9 PAGES

DOWNLOAD PAPER SAVE TO MY LIBRARY

GET CITATION

RIGHTS & PERMISSIONS

Get copyright permission Get copyright permission on Copyright Marketplace

KEYWORDS

Optical proximity correction

Scanning electron microscopy

Semiconducting wafers

Photomasks

SRAF

Data modeling

Failure analysis

Show All Keywords

Keywords/Phrases

Search In:

Publication Years