Damage threshold of sapphire in short and long pulse regime

B. Bussière; F. Canova; J.-P. Chambaret; P. Delaporte; T. Itina; M. Sentis

doi:10.1117/12.752215

28 June 2007 Damage threshold of sapphire in short and long pulse regime

B. Bussière, F. Canova, J.-P. Chambaret, P. Delaporte, T. Itina, M. Sentis

Proceedings Volume 6732, International Conference on Lasers, Applications, and Technologies 2007: Laser-assisted Micro- and Nanotechnologies; 67321P (2007) https://doi.org/10.1117/12.752215
Event: International Conference on Lasers, Applications, and Technologies '07, 2007, Minsk, Belarus

Abstract

The work presents the determination of the laser-induced damage threshold (LIDT) fluence of sapphire under various experimental conditions concerning the material irradiation (fs, ps and ns temporal regimes) and material preparation (surface state). The results may be used for optimising laser micromachining processes and also for studying laser crystal damage in high peak power femtosecond Ti:Sapphire laser chains.

Citation Download Citation

B. Bussière, F. Canova, J.-P. Chambaret, P. Delaporte, T. Itina, and M. Sentis "Damage threshold of sapphire in short and long pulse regime", Proc. SPIE 6732, International Conference on Lasers, Applications, and Technologies 2007: Laser-assisted Micro- and Nanotechnologies, 67321P (28 June 2007); https://doi.org/10.1117/12.752215

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