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15 October 2007 Germanium and InGaAs/InP SPADs for single-photon detection in the near-infrared
Alberto Tosi, Alberto Dalla Mora, Franco Zappa, Sergio Cova
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Proceedings Volume 6771, Advanced Photon Counting Techniques II; 67710P (2007) https://doi.org/10.1117/12.734961
Event: Optics East, 2007, Boston, MA, United States
Abstract
Single-Photon Avalanche Diodes (SPADs) for near-infrared (800-1700 nm) wavelengths can be manufactured both in InGaAs/InP and in germanium. Recently, new InGaAs/InP SPADs became commercially available with good overall performances, but with the intrinsic bottleneck of strong afterpulsing effect, originated in the InP multiplication layer. At present, germanium technology is not exploited for single-photon detectors, but previous devices demonstrate lower afterpulsing even at very low temperatures and promising dark count rate when employing pure manufacturing process. In this work, we compare germanium and InGaAs/InP SPADs in terms of dark counts, afterpulsing, timing jitter, and quantum efficiency. Eventually, we highlight the motivations for considering germanium as a key material for single-photon counting in the NIR.
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Alberto Tosi, Alberto Dalla Mora, Franco Zappa, and Sergio Cova "Germanium and InGaAs/InP SPADs for single-photon detection in the near-infrared", Proc. SPIE 6771, Advanced Photon Counting Techniques II, 67710P (15 October 2007); https://doi.org/10.1117/12.734961
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KEYWORDS
Germanium
Avalanche photodetectors
Indium gallium arsenide
Single photon detectors
Photodetectors
Absorption
Picosecond phenomena
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