Optical proximity correction for 0.13 um SiGe:C BiCMOS

S. Geisler; J. Bauer; U. Haak; U. Jagdhold; R. Pliquett; E. Matthus; R. Schrader; H. Wolf; U. Baetz; H. Beyer; M. Niehoff

doi:10.1117/12.798786

2 May 2008 Optical proximity correction for 0.13 μm SiGe:C BiCMOS

S. Geisler, J. Bauer, U. Haak, U. Jagdhold, R. Pliquett, E. Matthus, R. Schrader, H. Wolf, U. Baetz, H. Beyer, M. Niehoff

Author Affiliations +

Proceedings Volume 6792, 24th European Mask and Lithography Conference; 679210 (2008) https://doi.org/10.1117/12.798786
Event: 24th European Mask and Lithography Conference, 2008, Dresden, Germany

Abstract

We present results for a rule based optical proximity (RB-OPC) and a model based optical proximity correction (MB-OPC) for 0.13 μm SiGe:C BiCMOS technology. The technology provides integrated high performance heterojunction bipolar transistors (HBTs) with cut-off frequencies up to 300 GHz. This requires an optical proximity correction of critical layers with an excellent mask quality. This paper provides results of the MB-OPC and RB-OPC using the Mentor Calibre software in comparison to uncorrected structures (NO-OPC). We show RB- and MB-OPC methods for the shallow trench and gate layer, and the RB-OPC for the emitter window-, contact- and metal layers. We will discuss the impact of the RB- and MB-OPC rules on the process margin and yield in the 0.13 μm SiGe:C BiCMOS technology, based on CD-SEM data obtained from the evaluation of the RB- and MB-OPC corrected SRAM cells.

Citation Download Citation

S. Geisler, J. Bauer, U. Haak, U. Jagdhold, R. Pliquett, E. Matthus, R. Schrader, H. Wolf, U. Baetz, H. Beyer, and M. Niehoff "Optical proximity correction for 0.13 μm SiGe:C BiCMOS", Proc. SPIE 6792, 24th European Mask and Lithography Conference, 679210 (2 May 2008); https://doi.org/10.1117/12.798786

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