Semiconductor nanowires for solid state lighting: simulation, epitaxy, integration, optical and electrical characterization

F. Levy; Y. Desieres; P. Ferret; S. Fichet; S. Gidon; P. Gilet; P. Noel; I.-C. Robin; E. Romain-Latu; M. Rosina; R. Songmuang; G. Feuillet; B. Daudin; A. Chelnokov

doi:10.1117/12.768615

2 October 2007 Semiconductor nanowires for solid state lighting: simulation, epitaxy, integration, optical and electrical characterization

F. Levy, Y. Desieres, P. Ferret, S. Fichet, S. Gidon, P. Gilet, P. Noel, I.-C. Robin, E. Romain-Latu, M. Rosina, R. Songmuang, G. Feuillet, B. Daudin, A. Chelnokov

Author Affiliations +

Proceedings Volume 6797, Manufacturing LEDs for Lighting and Displays; 67970P (2007) https://doi.org/10.1117/12.768615
Event: Manufacturing LEDs for Lighting and Display, 2007, Berlin, Germany

Abstract

LEDs based on semiconductor nanowires are a promising alternative to the standard planar devices to achieve low cost high yield manufacturing for the general lighting applications. The expected advantages of such structures are a high crystalline quality of the heterostructures, compliance with a large range of substrates and light extraction enhancement. We report here on the present status of our research work concerning the electromagnetic simulation of nanowire emission, the epitaxy of near-UV semiconductor vertically aligned nanowires, the collective integration technology of these nanowires and their characterizations.

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F. Levy, Y. Desieres, P. Ferret, S. Fichet, S. Gidon, P. Gilet, P. Noel, I.-C. Robin, E. Romain-Latu, M. Rosina, R. Songmuang, G. Feuillet, B. Daudin, and A. Chelnokov "Semiconductor nanowires for solid state lighting: simulation, epitaxy, integration, optical and electrical characterization", Proc. SPIE 6797, Manufacturing LEDs for Lighting and Displays, 67970P (2 October 2007); https://doi.org/10.1117/12.768615

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