The fabrication of high-brightness and high-power InGaAlP single-side red LED

Pingjuan Niu; Xiaoli Wang; Weilian Guo; Huiying Luo; Xiansong Fu; Hongwei Liu; Xiaoyun Li; Guanghua Yang; Haitao Tian

doi:10.1117/12.759818

20 November 2007 The fabrication of high-brightness and high-power InGaAlP single-side red LED

Pingjuan Niu, Xiaoli Wang, Weilian Guo, Huiying Luo, Xiansong Fu, Hongwei Liu, Xiaoyun Li, Guanghua Yang, Haitao Tian

Proceedings Volume 6828, Light-Emitting Diode Materials and Devices II; 68280V (2007) https://doi.org/10.1117/12.759818
Event: Photonics Asia 2007, 2007, Beijing, China

Abstract

In this paper, it is reported that the design and fabrication of high-brightness and high-power InGaAlP single-side red LED with electrodes which are interdigitated with the fingers. High-brightness and high-power InGaAlP LED is a new kind of visible light LED developed in recent years, which is driven by large current capacity, high luminous efficiency and excellent heat resistance. It has been used in various fields, such as large area displays, traffic lights, brake lights and so on. As compared with the conventional double-side LED, the single-side LED is more flexible to integrate with other devices and its fabrication is simplified. The size of chip is 1mm². The fabrication of single-side LED, essentially, is the same as conventional LED, involving photolithography, PECVD SiO₂, wet etching, evaporating, lift off and rapid thermal annealing using four masks. To control the widths of mesa and N electrode precisely, the selecting etch technique has been adopted, using HCL: H₂O:H₂O₂ as the InGaAlP etching solution. I-V characteristics, light emission spectrum, luminous flux, luminous intensity and luminous efficiency of this LED have been measured. The characteristics are obtained with turn-on voltage of 1.5V and forward current of 400mA at its forward voltage of 3V. The peak wavelength is 635nm, which corresponds to red light, and the Full Width of Half Maximum is 16.4nm at injection current of 350mA. The luminous intensity is 830 mcd. The color coordinates is x=0.6943, y=0.3056 and the color index is 18.4. So we will conclude that the high-brightness and high-power InGaAlP single-side red LED will become new focus in both scientific research and industrial investment for its wide application.

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Pingjuan Niu, Xiaoli Wang, Weilian Guo, Huiying Luo, Xiansong Fu, Hongwei Liu, Xiaoyun Li, Guanghua Yang, and Haitao Tian "The fabrication of high-brightness and high-power InGaAlP single-side red LED", Proc. SPIE 6828, Light-Emitting Diode Materials and Devices II, 68280V (20 November 2007); https://doi.org/10.1117/12.759818

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KEYWORDS

Light emitting diodes

Etching

Aluminium gallium indium phosphide

Photoresist materials

Semiconducting wafers

Luminous efficiency

Electrodes

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