10 W high-efficiency high-brightness tapered diode lasers at 976 nm

R. Ostendorf; G. Kaufel; R. Moritz; M. Mikulla; O. Ambacher; M. T. Kelemen; J. Gilly

doi:10.1117/12.761124

13 February 2008 10 W high-efficiency high-brightness tapered diode lasers at 976 nm

R. Ostendorf, G. Kaufel, R. Moritz, M. Mikulla, O. Ambacher, M. T. Kelemen, J. Gilly

Author Affiliations +

Proceedings Volume 6876, High-Power Diode Laser Technology and Applications VI; 68760H (2008) https://doi.org/10.1117/12.761124
Event: Lasers and Applications in Science and Engineering, 2008, San Jose, California, United States

Abstract

Tapered diode lasers combine high output power and a beam quality near to the diffraction limit resulting in very high brightness. Therefore, they are finding use in a wide range of applications today, such as pumping of rare-earth-doped fibre amplifiers, tunable frequency doubling of diode lasers for blue-green outputs, and non linear spectroscopy. Due to increasing brightness and lifetime tapered lasers even become attractive for material processing and for telecom applications like pumping of Er-doped fiber amplifiers or raman amplifiers. In order to further enhance the brightness of tapered diode lasers the output power has to be increased while simultaneously the beam quality has to be kept near the diffraction limit. For this purpose we have grown low modal gain, single quantum well InGaAs/AlGaAs devices emitting at 976 nm by molecular beam epitaxy. The lateral design of the investigated laser diodes consists of a tapered section and a ridge-waveguide section. Since it has been shown by previous simulations and experiments that longer tapered sections allow higher output power with unchanged beam quality, we use tapered section lengths of 2000 μm, 3000 μm and 4000 μm. The beam quality parameter M² and output powers as well as the nearfields of the different structures were carefully investigated. For longer devices we reach an optical output power of more than 10 W per single emitter in continuous wave mode (cw) without any distinct thermal rollover.

Citation Download Citation

R. Ostendorf, G. Kaufel, R. Moritz, M. Mikulla, O. Ambacher, M. T. Kelemen, and J. Gilly "10 W high-efficiency high-brightness tapered diode lasers at 976 nm", Proc. SPIE 6876, High-Power Diode Laser Technology and Applications VI, 68760H (13 February 2008); https://doi.org/10.1117/12.761124

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

;

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE