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Indium-silver as solder materials for low temperature bonding had been introduced earlier. In theory the final bonding
interface composition is determined by the overall materials composition. Wafer bonding based multiple intermediate
layers facilitates precise control of the formed alloy composition and the joint thickness. Thus the bonding temperature
and post-bonding re-melting temperature could be easily designed by controlling the multilayer materials. In this paper, a
more fundamental study of In-Ag solder materials is carried out in chip-to-chip level by using flip-chip based
thermocompression bonding. Bonding at 180°C for various time duration under various bonding pressure is studied.
Approaches of forming Ag2In with re-melting temperature higher than 400°C at the bonding interface are proposed and
discussed. Knowledge learned in this process technology can support us to develop sophisticated wafer level packaging
process based wafer bonding for applications of MEMS and IC packages.
Riko I Made,Chee Lip Gan,Chengkuo Lee,Li Ling Yan,Aibin Yu,Seung Wook Yoon, andJohn H. Lau
"Study of Ag-In solder as low temperature wafer bonding intermediate layer", Proc. SPIE 6884, Reliability, Packaging, Testing, and Characterization of MEMS/MOEMS VII, 68840H (20 February 2008); https://doi.org/10.1117/12.762046
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Riko I Made, Chee Lip Gan, Chengkuo Lee, Li Ling Yan, Aibin Yu, Seung Wook Yoon, John H. Lau, "Study of Ag-In solder as low temperature wafer bonding intermediate layer," Proc. SPIE 6884, Reliability, Packaging, Testing, and Characterization of MEMS/MOEMS VII, 68840H (20 February 2008); https://doi.org/10.1117/12.762046