Monolithically integrated III-Sb based laser diodes grown on miscut Si substrates

J. Tatebayashi; A. Jallipalli; M. N. Kutty; S. H. Huang; N. Nuntawong; G. Balakrishnan; L. R. Dawson; D. L. Huffaker

doi:10.1117/12.775340

5 February 2008 Monolithically integrated III-Sb based laser diodes grown on miscut Si substrates

J. Tatebayashi, A. Jallipalli, M. N. Kutty, S. H. Huang, N. Nuntawong, G. Balakrishnan, L. R. Dawson, D. L. Huffaker

Proceedings Volume 6909, Novel In-Plane Semiconductor Lasers VII; 69090M (2008) https://doi.org/10.1117/12.775340
Event: Integrated Optoelectronic Devices 2008, 2008, San Jose, California, United States

Abstract

We report the formation and growth characteristics of an interfacial misfit (IMF) array between AlSb and Si and their application to III-Sb based quantum well (QW) light-emitting devices including edge-emitting laser diodes and verticalcavity surface emitting lasers (VCSELs) monolithically grown on a Si (001) substrate. A III-Sb epi-structure is grown monolithically on the Si substrate via a thin (≅50 nm) AlSb nucleation layer. A 13% lattice mismatch between AlSb and Si is accommodated by using the IMF array. We demonstrate monolithic VCSELs grown on Si(001) substrates operating under room-temperature with optically-pumped conditions. A 3-mm pump spot size results in peak threshold excitation density of I_th= 0.1 mJ/cm² and a multimode lasing spectrum peak at 1.62 μm. Moreover, broad-area edgeemitters consisting of GaSb/AlGaSb QWs are demonstrated under pulsed conditions at 77K with a threshold current density of ≅2 kA/cm² and a maximum peak output power of ≅20 mW for a 1mm-long device. A use of 5° miscut Si substrates enables both IMF formation and suppression of an anti-phase domain, resulting in a drastic suppression of dislocation density over the III-Sb epi-layer and realization of electrically-injected laser diodes operating at 77 K. The current-voltage (I-V) characteristics indicate a diode turn-on of 0.7 V, which is consistent with a theoretical built-in potential of the laser diode. This device is characterized by a 9.1 Ω forward resistance and a leakage current density of 0.7 A/cm² at -5 V and 46.9 A/cm² at -15 V. This IMF technique will enable the realization of III-Sb based electrically injected VCSELs operating at the fiber-optic communication wavelength monolithically grown on a Si platform.

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J. Tatebayashi, A. Jallipalli, M. N. Kutty, S. H. Huang, N. Nuntawong, G. Balakrishnan, L. R. Dawson, and D. L. Huffaker "Monolithically integrated III-Sb based laser diodes grown on miscut Si substrates", Proc. SPIE 6909, Novel In-Plane Semiconductor Lasers VII, 69090M (5 February 2008); https://doi.org/10.1117/12.775340

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KEYWORDS

Silicon

Vertical cavity surface emitting lasers

Semiconductor lasers

Gallium antimonide

Quantum wells

Avalanche photodetectors

Interfaces

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