Ion beam deposition for defect-free EUVL mask blanks

Patrick Kearney; C. C. Lin; Takashi Sugiyama; Chan-Uk Jeon; Rajul Randive; Ira Reiss; Renga Rajan; Paul Mirkarimi; Eberhard Spiller

doi:10.1117/12.774505

21 March 2008 Ion beam deposition for defect-free EUVL mask blanks

Patrick Kearney, C. C. Lin, Takashi Sugiyama, Chan-Uk Jeon, Rajul Randive, Ira Reiss, Renga Rajan, Paul Mirkarimi, Eberhard Spiller

Author Affiliations +

Proceedings Volume 6921, Emerging Lithographic Technologies XII; 69211X (2008) https://doi.org/10.1117/12.774505
Event: SPIE Advanced Lithography, 2008, San Jose, California, United States

Abstract

The availability of defect-free mask blanks is one of the most significant challenges facing the commercialization of extreme ultraviolet lithography (EUVL). The SEMATECH Mask Blank Development Center (MBDC) was created to drive the development of EUVL mask blanks to meet the industry's needs. EUV mask defects come from two primary sources: the incoming mask substrate and defects added during multilayer deposition. For incoming defects, we have both an in-house advanced cleaning capability and an advanced in situ defect smoothing capability. This smoothing system utilizes combinations of ion beam deposition and etch to planarize any remaining incoming substrate defects. For defects added in the multilayer deposition process, we have an aggressive program to find, identify, and eliminate the defects. This paper summarizes progress in smoothing substrate defects and eliminating ever smaller multilayer-added defects. We will show the capability of our smoothing process to planarize our existing population of bump and pit type defects and discuss how quickly this can be done. We will also discuss how many defects are added by the planarization process. In addition, we will show 54 nm sensitivity defect data for multilayer-coated EUV mask blanks.

Citation Download Citation

Patrick Kearney, C. C. Lin, Takashi Sugiyama, Chan-Uk Jeon, Rajul Randive, Ira Reiss, Renga Rajan, Paul Mirkarimi, and Eberhard Spiller "Ion beam deposition for defect-free EUVL mask blanks", Proc. SPIE 6921, Emerging Lithographic Technologies XII, 69211X (21 March 2008); https://doi.org/10.1117/12.774505

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available