Paper
26 March 2008 Synthesis and properties of new anionic photoacid generators bound polymer resists for e-beam and EUV lithography
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Abstract
A new series of methacrylate substituted benzene sulfonic photoacid generators (PAGs) and a perfluoro alkanesulfonic PAG, bound polymeric resists based on hydroxystyrene (HS) and 2-ethyl-2-adamantyl methacrylate (EA) were prepared and characterized. The acid yield of these PAG bound polymer resists was among the range of 54-81% under deep ultraviolet exposure (254 nm) that agrees well with the electron withdrawing effect of the substituents on the PAG anion for enhancing acid generation efficiency. The intrinsic lithography performance of these polymer-bound PAG resists showed sub-50 nm half-pitch resolution and < 5 nm LER (3σ).
© (2008) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Mingxing Wang, Cheng-Tsung Lee, Clifford L. Henderson, Wang Yueh, Jeanette M. Roberts, and Kenneth E. Gonsalves "Synthesis and properties of new anionic photoacid generators bound polymer resists for e-beam and EUV lithography", Proc. SPIE 6923, Advances in Resist Materials and Processing Technology XXV, 692312 (26 March 2008); https://doi.org/10.1117/12.769004
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Cited by 9 scholarly publications and 1 patent.
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KEYWORDS
Polymers

Absorption

Extreme ultraviolet lithography

Deep ultraviolet

Lithography

Line edge roughness

NOx

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