Paper
11 March 2008 Pockels effect in GaN/AlxGa1-xN superlattice with different quantum structures
P. Chen, S. P. Li, X. G. Tu, Y. H. Zuo, L. Zhao, S. W. Chen, J. C. Li, W. Lin, H. Y. Chen, D. Y. Liu, J. Y. Kang, Y. D. Yu, J. Z. Yu, Q. M. Wang
Author Affiliations +
Proceedings Volume 6984, Sixth International Conference on Thin Film Physics and Applications; 69841G (2008) https://doi.org/10.1117/12.792582
Event: Sixth International Conference on Thin Film Physics and Applications, 2007, Shanghai, China
Abstract
The linear electro-optic (Pockels) effect of wurtzite gallium nitride (GaN) films and six-period GaN/AlxGa1-xN superlattices with different quantum structures were demonstrated by a polarization-maintaining fiber-optical Mach-Zehnder interferometer system with an incident light wavelength of 1.55μm. The samples were prepared on (0001) sapphire substrate by low-temperature metalorganic chemical vapor deposition (MOCVD). The measured coefficients of the GaN/AlxGa1-xN superlattices are much larger than those of bulk material. Taking advantage of the strong field localization due to resonances, GaN/AlxGa1-xN SL can be proposed to engineer the nonlinear responses.
© (2008) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
P. Chen, S. P. Li, X. G. Tu, Y. H. Zuo, L. Zhao, S. W. Chen, J. C. Li, W. Lin, H. Y. Chen, D. Y. Liu, J. Y. Kang, Y. D. Yu, J. Z. Yu, and Q. M. Wang "Pockels effect in GaN/AlxGa1-xN superlattice with different quantum structures", Proc. SPIE 6984, Sixth International Conference on Thin Film Physics and Applications, 69841G (11 March 2008); https://doi.org/10.1117/12.792582
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Gallium nitride

Polarization

Superlattices

Electro optics

Metalorganic chemical vapor deposition

Aluminum

Stereolithography

Back to Top