Paper
11 March 2008 Photon upconversion devices for imaging
H. C. Liu, H. Luo, D. Ban, M. Buchanan, Z. R. Wasilewski, A. J. SpringThorpe, P. J. Poole
Author Affiliations +
Proceedings Volume 6984, Sixth International Conference on Thin Film Physics and Applications; 698431 (2008) https://doi.org/10.1117/12.792384
Event: Sixth International Conference on Thin Film Physics and Applications, 2007, Shanghai, China
Abstract
This paper reviews our research on photon upconversion devices for wavelengths from 1.5 μm to 0.87 μm. The 1.5 μm is chosen for its importance for eye-safe active imaging; whereas 0.87 μm corresponds to the bandgap of GaAs which is the active region of our high efficiency light emitting diode (LED). The basic idea is to integrate a 1.5 μm detector with a 0.87 µm LED, connected in series. The detected photocurrent drives the LED, thereby achieving the upconversion. Various approaches of integration methods and device designs have been tested. The upconversion approach provides an alternative to the standard hybrid integration with readout circuits and may be advantageous for some applications.
© (2008) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
H. C. Liu, H. Luo, D. Ban, M. Buchanan, Z. R. Wasilewski, A. J. SpringThorpe, and P. J. Poole "Photon upconversion devices for imaging", Proc. SPIE 6984, Sixth International Conference on Thin Film Physics and Applications, 698431 (11 March 2008); https://doi.org/10.1117/12.792384
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KEYWORDS
Light emitting diodes

Upconversion

Doping

Internal quantum efficiency

Photodetectors

Imaging devices

External quantum efficiency

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