PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.
The study of the emission properties of opal-erbium oxide nanocomposites in the wide range of erbium
concentrations was carried out. Erbium oxide concentration was varied from 0.25 to 16%wt. Maximal output of the
photoluminescence (PL) took place at 1%wt of erbium oxide concentration. It was shown that the annealing
temperatures from 600 to 900°C were too low to exhibit sufficient emission properties of the erbium-opal composites.
The presence of the erbium silicates Er2SiO5 and Er2Si2O7 in the
opal-erbium nanocomposites was revealed by X-ray
phase analysis. Amorphous silica in opal matrix was not crystallized at the annealing during a few hours at
1000 - 1200°C. The case of the tens hours of annealing the crystoballite phase occurred. No angle dependence of the PL
intensity was observed as a result of degradation of the photonic band gap (PBG) at the annealing of the opal-erbium
oxide nanocomposites. Further modification of the material processing to achieve a strong photonic band gap reflection
peak near 1550 nm with high PL intensity in the
opal-Er2O3 composite is running.
G. Emelchenko,E. Steinman,V. Masalov,A. Tereshchenko,A. Bazhenov, andA. Grishin
"1.5 μm photoluminescence of Er3+ in opal based photonic crystals", Proc. SPIE 6989, Photonic Crystal Materials and Devices VIII, 69890P (6 May 2008); https://doi.org/10.1117/12.778981
ACCESS THE FULL ARTICLE
INSTITUTIONAL Select your institution to access the SPIE Digital Library.
PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.
The alert did not successfully save. Please try again later.
G. Emelchenko, E. Steinman, V. Masalov, A. Tereshchenko, A. Bazhenov, A. Grishin, "1.5 μm photoluminescence of Er3+ in opal based photonic crystals," Proc. SPIE 6989, Photonic Crystal Materials and Devices VIII, 69890P (6 May 2008); https://doi.org/10.1117/12.778981