Subpicosecond dielectric breakdown and incubation in TixSi1-xO2 composite films with adjustable bandgap

L. A. Emmert; D. Nguyen; I. Cravetchi; M. Mero; W. Rudolph; M. Jupe; M. Lappschies; K. Starke; D. Ristau

doi:10.1117/12.785154

14 May 2008 Subpicosecond dielectric breakdown and incubation in Ti_xSi_1-xO₂ composite films with adjustable bandgap

L. A. Emmert, D. Nguyen, I. Cravetchi, M. Mero, W. Rudolph, M. Jupe, M. Lappschies, K. Starke, D. Ristau

Proceedings Volume 7005, High-Power Laser Ablation VII; 70051V (2008) https://doi.org/10.1117/12.785154
Event: High-Power Laser Ablation 2008, 2008, Taos, New Mexico, United States

Abstract

Laser induced breakdown of single-layer, ion-beam sputtered Ti_xSi_1-xO₂ composite films was studied using single and multiple pulses from a femtosecond Ti:sapphire laser. The bandgap of this coating material can be gradually adjusted with the composition parameter x. A scaling law with respect to the bandgap energy and pulse duration dependence of the single-pulse damage threshold that was observed previously for pure oxide films was found to apply to the composite films as well. The dependence of the damage threshold as a function of pulse number F(N) was similar to the behavior observed for pure oxide films. It was possible to explain the dependence as a function of pulse number using a theoretical model based on the formation and accumulation of defects. The shape of F(N) can be used to estimate the role of shallow traps and deep traps on the multiple-pulse breakdown behavior.

Citation Download Citation

L. A. Emmert, D. Nguyen, I. Cravetchi, M. Mero, W. Rudolph, M. Jupe, M. Lappschies, K. Starke, and D. Ristau "Subpicosecond dielectric breakdown and incubation in Ti_xSi_1-xO₂ composite films with adjustable bandgap", Proc. SPIE 7005, High-Power Laser Ablation VII, 70051V (14 May 2008); https://doi.org/10.1117/12.785154

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