Paper
22 July 2008 New DEPFET structures: concepts, simulations and experimental results
G. Lutz, S. Herrmann, P. Lechner, M. Porro, R. H. Richter, L. Strüder, J. Treis
Author Affiliations +
Abstract
Two new DEPFET concepts are presented motivated by potential applications in adaptive optics and in synchrotron radiation experiments at the future Free Electron X-ray Laser (XFEL) in Hamburg. The gatable DEPFET structure allows the selection of signal charges arriving in a predefined time interval. Charges produced outside this gate interval are lead to a sink electrode while charge collected already is protected and kept for later delayed readout. In synchrotron radiation experiments one faces the challenge of being sensitive enough for single X-ray photons in some parts of the detector while on other regions a very large charge due to the superposition of many X-rays has to be measured. A DEPFET with strongly non-linear characteristics combines naturally excellent energy resolution with high dynamic range, large charge handling capability and high read out speed.
© (2008) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
G. Lutz, S. Herrmann, P. Lechner, M. Porro, R. H. Richter, L. Strüder, and J. Treis "New DEPFET structures: concepts, simulations and experimental results", Proc. SPIE 7021, High Energy, Optical, and Infrared Detectors for Astronomy III, 70210Y (22 July 2008); https://doi.org/10.1117/12.787839
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Cited by 7 scholarly publications.
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KEYWORDS
Field effect transistors

Sensors

Transistors

Synchrotron radiation

X-ray detectors

X-rays

Photons

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