Strong photoluminescence at 1540 nm from Er-doped amorphous silicon oxycarbide: a novel silicon material for photonic applications

Spyros Gallis; Vasileios Nikas; Himani Suhag; Mengbing Huang; Alain E. Kaloyeros

doi:10.1117/12.795560

4 September 2008 Strong photoluminescence at 1540 nm from Er-doped amorphous silicon oxycarbide: a novel silicon material for photonic applications

Spyros Gallis, Vasileios Nikas, Himani Suhag, Mengbing Huang, Alain E. Kaloyeros

Author Affiliations +

Proceedings Volume 7030, Nanophotonic Materials V; 703004 (2008) https://doi.org/10.1117/12.795560
Event: NanoScience + Engineering, 2008, San Diego, California, United States

Abstract

The present investigators have previously reported on strong room-temperature luminescence at 1540 nm from erbium-doped amorphous silicon oxycarbide (a-SiC_xO_y:Er) thin films. An enhancement of ~20 times was found for asgrown SiC_0.5O_1.0:Er compared to SiO₂:Er control samples under continuous wavelength (cw) pumping at 496.5 nm. Here, we report the effects of post-deposition annealing on the photoluminescence (PL) properties of Er-doped silicon oxycarbide. The amorphous SiC_xO_y films were grown by thermal chemical vapor deposition (TCVD) at 800°C and postdeposition annealing was conducted in the temperature range 500-1100°C. The thin films were then implanted with 260keV Er ions and subsequently annealed at 900°C. Strong room-temperature photoluminescence around 1540 nm was observed, with efficient Er⁺³ ion excitation occurring for pumping wavelengths ranging from 460 nm to 600 nm. Modeling of the power dependence of Er luminescence yielded an effective Er excitation cross-section about four orders of magnitude larger than that for a direct optical excitation of Er⁺³ ions. Additionally, Fourier transform infrared spectroscopy (FTIR) studies of post-deposition annealed samples revealed a strong correlation between the Er PL intensity and the C-O bond concentration in the materials. The work suggests a novel method for achieving efficient Er luminescence in Si-based materials through controlled engineering of the Si-C-O system.

Citation Download Citation

Spyros Gallis, Vasileios Nikas, Himani Suhag, Mengbing Huang, and Alain E. Kaloyeros "Strong photoluminescence at 1540 nm from Er-doped amorphous silicon oxycarbide: a novel silicon material for photonic applications", Proc. SPIE 7030, Nanophotonic Materials V, 703004 (4 September 2008); https://doi.org/10.1117/12.795560

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