Paper
26 August 2008 Electronic devices based upon Germanium nano-crystals with durability to strong neutron irradiation
Itamar Baron, Shai Levy, Avraham Chelly, Zeev Zalevsky, Ofer Limon, Shaobo Dun, Tiecheng Lu, Issai Shlimak
Author Affiliations +
Abstract
In this paper we present the preliminary experimental characterization of electronic devices based upon Germanium nano-crystals (nc-Ge) embedded in thick SiO2 films grown on a Si substrate. The samples were prepared using Ge ion implantation followed by thermal annealing. Typical diameter of the nc-Ge is shown to be in the range of 4- 10nm. Gold (Au) contacts were deposited on the top of the oxide surface allowing measurements of the electronic properties. We present preliminary experimental results of electronic properties of the nc-Ge based devices including current-voltage (I-V) and capacitance-voltage (C-V) curves of the nano-devices while illuminated by white light and an external laser at a wavelength of 532nm for various levels of intensity. The characterization curves were also obtained at different temperatures. The proposed technology of devices based on nc-Ge was proven to be insensitive to high doses of irradiation by neutrons in a research nuclear reactor, which suggests that these nc-Ge devices can be used under extreme working conditions such as strong cosmic radiation appearing in outer space.
© (2008) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Itamar Baron, Shai Levy, Avraham Chelly, Zeev Zalevsky, Ofer Limon, Shaobo Dun, Tiecheng Lu, and Issai Shlimak "Electronic devices based upon Germanium nano-crystals with durability to strong neutron irradiation", Proc. SPIE 7095, Nanophotonics and Macrophotonics for Space Environments II, 709502 (26 August 2008); https://doi.org/10.1117/12.795667
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KEYWORDS
Germanium

Silica

Capacitance

Electronic components

Resistance

Annealing

Gold

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