Paper
3 October 2008 Whole field residual stress measurement using computer aided reflection grating
Author Affiliations +
Proceedings Volume 7155, Ninth International Symposium on Laser Metrology; 71552C (2008) https://doi.org/10.1117/12.814586
Event: Ninth International Symposium on Laser Metrology, 2008, Singapore, Singapore
Abstract
In our previous paper, "Warpage of thin wafers using computer aided reflection moire method," the surface curvature and residual stresses were evaluated using the versatility of computer aided reflection grating method to manipulate and generate gratings in two orthogonal directions. A very good agreement between the theory and experimental results was established. The bending stresses of wafers due to the deposition of backside metallization were evaluated without the aid of reference grating. In this paper, some aspects of the work is extended. An optical flat with flatness λ/10 is used as a reference plate to extract the residual stress of the wafers with different backside metallization. By utilizing the phase information from the moiré pattern between deformed grating (wafer) and undeformed grating (optical flat), the surface deformation of the wafer and residual stresses are investigated quantitatively and numerically. This technique, with satisfactory sensitivity and accuracy, can be used to characterize the residual stress of wafer due to warpage that may lead to the crack issues in semiconductor manufacturing industry.
© (2008) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Chi Seng Ng, Yoke Chin Goh, and Anand K. Asundi "Whole field residual stress measurement using computer aided reflection grating", Proc. SPIE 7155, Ninth International Symposium on Laser Metrology, 71552C (3 October 2008); https://doi.org/10.1117/12.814586
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KEYWORDS
Semiconducting wafers

Reflection

Wafer-level optics

LCDs

Modulation

Beam splitters

Image analysis

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